@article{oai:aue.repo.nii.ac.jp:00001002,
 author = {清水, 秀己 and 岸, 稚人},
 journal = {愛知教育大学研究報告. 芸術・保健体育・家政・技術科学・創作編},
 month = {Mar},
 note = {text, An anodic oxidation on Si surface has been tried in order to gain information for the anodic oxidation on SiC which has been attracted a great deal of attention as a semiconductor material for operating devices at high temperature in near future. In this paper the anodic oxidation on Si surface has been investigated by systematically changing the pH values of electrolyte and electric current. The anodic oxide films have been characterized by ellipsometric and infrared absorption studies. High quality anodic oxide film on Si was formed at pH values of 9.00 and 5.95 in the electrolyte of NH_4OH solution.},
 pages = {83--91},
 title = {陽極酸化によるシリコン表面上への酸化膜の形成と評価},
 volume = {50},
 year = {2001}
}