@article{oai:aue.repo.nii.ac.jp:00001011,
 author = {清水, 秀己 and 種村, 修一},
 journal = {愛知教育大学研究報告. 芸術・保健体育・家政・技術科学},
 month = {Mar},
 note = {text, Thermal oxidation of Silicon a mixed oxygen and ozone ambient in the temperature range of 400℃-800℃ is reported. Beteen 400℃ and 600℃ a large enhancement in oxidation is observed compared with conventional oxide growth in a pure oxygen ambient. For temperature above 800℃ conventional thermal oxidation dominates and no significant enhancement is found. Effects of Ozone in short-time oxidation is more remarkable than in long-time oxidation, reflecting that surface reaction dominates in short-time oxidation.},
 pages = {57--65},
 title = {シリコン熱酸化膜形成におけるオゾンの促進効果},
 volume = {49},
 year = {2000}
}