{"created":"2023-06-20T14:21:10.086919+00:00","id":1011,"links":{},"metadata":{"_buckets":{"deposit":"3e716e23-5ae0-4b88-90bd-7dcfdb2875da"},"_deposit":{"created_by":3,"id":"1011","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1011"},"status":"published"},"_oai":{"id":"oai:aue.repo.nii.ac.jp:00001011","sets":["6:129:130"]},"author_link":["1175","25"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Effects of Ozone on Thermal Oxidation of Silicon"}]},"item_3_biblio_info_7":{"attribute_name":"書誌事項","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-03-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"65","bibliographicPageStart":"57","bibliographicVolumeNumber":"49","bibliographic_titles":[{"bibliographic_title":"愛知教育大学研究報告. 芸術・保健体育・家政・技術科学"}]}]},"item_3_description_27":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_3_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Thermal oxidation of Silicon a mixed oxygen and ozone ambient in the temperature range of 400℃-800℃ is reported. Beteen 400℃ and 600℃ a large enhancement in oxidation is observed compared with conventional oxide growth in a pure oxygen ambient. For temperature above 800℃ conventional thermal oxidation dominates and no significant enhancement is found. Effects of Ozone in short-time oxidation is more remarkable than in long-time oxidation, reflecting that surface reaction dominates in short-time oxidation.","subitem_description_type":"Abstract"}]},"item_3_link_3":{"attribute_name":"研究者総覧へのリンク","attribute_value_mlt":[{"subitem_link_text":"清水, 秀己","subitem_link_url":"https://souran.aichi-edu.ac.jp/person/698d51a19d8a121ce581499d7b701668ja.html"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"愛知教育大学"}]},"item_3_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN00006773","subitem_source_identifier_type":"NCID"}]},"item_3_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0388-7367","subitem_source_identifier_type":"ISSN"}]},"item_3_text_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"subitem_text_value":"愛知教育大学研究報告, 芸術・保健体育・家政・技術科学. 2000, 49, p.57-65."}]},"item_3_text_26":{"attribute_name":"著者別名","attribute_value_mlt":[{"subitem_text_value":"シミズ, ヒデキ"},{"subitem_text_value":"タネムラ, シュウイチ"},{"subitem_text_value":"Tanemura, Shuichi"}]},"item_3_text_4":{"attribute_name":"著者(別言語)","attribute_value_mlt":[{"subitem_text_value":"Shimizu, Hideki"},{"subitem_text_value":"Tanemura, Syuichi"}]},"item_3_version_type_14":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"清水, 秀己"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"種村, 修一"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-03-27"}],"displaytype":"detail","filename":"kengei495765.pdf","filesize":[{"value":"283.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kengei495765.pdf","url":"https://aue.repo.nii.ac.jp/record/1011/files/kengei495765.pdf"},"version_id":"6d4d0e24-5fb5-4e9c-98ad-ea7c7984e2a4"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"熱酸化","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermal Oxidation","subitem_subject_scheme":"Other"},{"subitem_subject":"オゾン","subitem_subject_scheme":"Other"},{"subitem_subject":"Ozone","subitem_subject_scheme":"Other"},{"subitem_subject":"シリコン","subitem_subject_scheme":"Other"},{"subitem_subject":"Silicon","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"シリコン熱酸化膜形成におけるオゾンの促進効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリコン熱酸化膜形成におけるオゾンの促進効果"}]},"item_type_id":"3","owner":"3","path":["130"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-12-04"},"publish_date":"2008-12-04","publish_status":"0","recid":"1011","relation_version_is_last":true,"title":["シリコン熱酸化膜形成におけるオゾンの促進効果"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T15:27:30.655479+00:00"}