| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2010-02-15 |
| タイトル |
|
|
タイトル |
Low temperature formation of luminescent Si nanocrystals with combined process of excimer UV-light irradiation and RTA |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Si |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
nanocrystal |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
ion implantation |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
photoluminescence |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
RTA |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
excimer-UV |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| 著者 |
Iwayama, T.S.
Fukaya, S.
Watanabe, H.
Hama, T.
Hole, D.E..
|
| 研究者総覧へのリンク |
|
|
|
Iwayama, T.S. |
|
|
http://souran.aichi-edu.ac.jp/souran/profile.do?id=Q222K2PZ&lng=ja |
| 著者(別言語) |
|
|
著者(別言語) |
岩山, 勉 |
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Si ion implantation was widely used to synthesize specimens of SiO_2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to achieve low temperature (below 1000 ℃) formation of luminescent Si nanocrystals in SiO_2 have been investigated. The Si ions were introduced at acceleration energy of 180 keV to fluences of 7.5 x 10^<16> and 1.5 x 10^<17> ions/cm2. The implanted samples were subsequently irradiated with a excimer-UV lamp for 2 hours. After the process, the samples were rapidly thermal annealed at 1050 ℃ for 5 minutes before furnace annealing (FA) at 900 ℃. Photoluminescence spectra were measured at various stages at the process. Effective visible photoluminescence is found to be observed even after FA at 900 ℃, only for specimens treated with excimer-UV lamp and RTA, prior to a low temperature FA process. Based on our experimental results, we discuss the mechanism for the initial formation process of the luminescent Si nanocrystals in SiO_2, together with the effects with excimer lamp irradiation and RTA process on the luminescence. |
| 書誌事項 |
Nuclear Instruments and Methods in Physics Research Section B
巻 267,
号 8-9,
p. 1328-1331,
発行日 2009-05-01
|
| 出版者 |
|
|
出版者 |
Elsevier B.V. |
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0168-583X |
| 書誌情報 |
|
|
|
Nuclear Instruments and Methods in Physics Research Section B. 2009, 267(8-9), p. 1328-1331. |
| 書誌レコードID |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA10529980 |
| 権利 |
|
|
権利情報 |
Copyright: 2009 Elsevier B.V. |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関係URI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1016/j.nimb.2009.01.040 |
|
|
関連名称 |
http://dx.doi.org/10.1016/j.nimb.2009.01.040 |
| DOI |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
info:doi/10.1016/j.nimb.2009.01.040 |
| 著者別名 |
|
|
著者別名 |
イワヤマ, ツトム |
| 資源タイプ |
|
|
内容記述タイプ |
Other |
|
内容記述 |
text |
iwayamats01.pdf (226.9 kB)
