| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2011-01-21 |
| タイトル |
|
|
タイトル |
Influence of UV irradiation and RTA process on optical properties of Si implanted SiO_2 |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
シリコン |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Si |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
ナノ結晶 |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Nanocrystals |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
ion implantation |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
photoluminescence |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
RTA |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
excimer-UV |
| 資源タイプ |
|
|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
journal article |
| その他のタイトル |
|
|
その他のタイトル |
Influence of UV irradiation and RTA process on optical properties of Si implanted SiO2 |
| 著者 |
Iwayama, T.S.
Hama, T.
Hole, D.E.
|
| 研究者総覧へのリンク |
|
|
|
Iwayama, T.S. |
|
|
http://souran.aichi-edu.ac.jp/souran/profile.do?id=Q222K2PZ&lng=ja |
| 著者(別言語) |
|
|
著者(別言語) |
岩山, 勉 |
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Si ion implantation was widely used to synthesize specimens of SiO_2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals have been investigated. The Si ions were introduced at acceleration energy of 180 keV to fluence of 7.5 x 10^<16> ions/cm^2. The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing (FA). Photoluminescence spectra were measured at various stages at the process. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA. Moreover, effective visible photoluminescence which is not observed with a simple FA treatment, is found to be observed even after FA at 900 ℃, only for specimens treated with excimer-UV lamp and RTA. Based on our experimental results, we discuss the effects of excimer-UV lamp irradiation and RTA process on Si nanocrystals related photoluminescence. |
| 書誌事項 |
Nuclear Instruments and Methods in Physics Research Section B
巻 268,
号 19,
p. 3203-3206,
発行日 2010
|
| 出版者 |
|
|
出版者 |
Elsevier B.V. |
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
0168-583X |
| 書誌情報 |
|
|
|
Nuclear Instruments and Methods in Physics Research Section B. 2010, 268(19), p. 3203-3206. |
| 書誌レコードID |
|
|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AA10529980 |
| 権利 |
|
|
権利情報 |
Copyright: 2010 Elsevier B.V. |
| 著者版フラグ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関係URI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://dx.doi.org/10.1016/j.nimb.2010.05.089 |
|
|
関連名称 |
http://dx.doi.org/10.1016/j.nimb.2010.05.089 |
| DOI |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
info:doi/10.1016/j.nimb.2010.05.089 |
| 著者別名 |
|
|
著者別名 |
イワヤマ, ツトム |
| 資源タイプ |
|
|
内容記述タイプ |
Other |
|
内容記述 |
text |
iwayamats002.pdf (251.7 kB)
